| PART |
Description |
Maker |
| CM800E2C-66H |
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
|
Mitsubishi Electric Semiconductor
|
| CM800E2C-66H |
2nd-Version HVIGBT Modules
|
Mitsubishi Electric
|
| 2SC5439 EE08313 |
NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR, HIGH VOLTA SWITCHINGM DC-DC CONVERTER, INVERTER LIGHTING APPLICATIONS) npn型三重扩散型（开关稳压器，高沃尔SWITCHINGM的DC - DC转换器，逆变照明应用
NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR HIGH VOLTA SWITCHINGM DC-DC CONVERTER INVERTER LIGHTING APPLICATIONS)
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| CM400HG-66H |
3rd-Version HVIGBT Modules
|
Mitsubishi Electric
|
| CM1000E4C-66R |
HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| CM800HA-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM400HB-90H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| QID3320004 |
Dual IGBT HVIGBT Module 200 Amperes/3300 Volts
|
Powerex Power Semicondu...
|
| QID4515001 |
Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts
|
Powerex Power Semiconductors
|
| QID3310006 |
Dual IGBT HVIGBT Module 100 Amperes/3300 Volts
|
Powerex Power Semicondu...
|
